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"Lee,CM"的相關文件

類別	日期	題名	作者
[電機工程研究所] 期刊論文	2006	HBP: Improvement in BP algorithm for an adaptive MLP decision feedback equalizer	Yang,SS; Ho,CL; Lee,CM
[電機工程研究所] 期刊論文	2005	Low resistance WSix-based ohmic contacts on n-type GaN	Pan,CC; Chen,MS; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2005	TSK-based decision feedback equalizer using an evolutionary algorithm applied to QAM communication systems	Siu,S; Ho,CL; Lee,CM
[電機工程研究所] 期刊論文	2004	InGaN-GaN MQW LEDs with current blocking layer formed by selective activation.	Lee,CM; Chuo,CC; Liu,YC; Chen,IL; Chyi,JI
[電機工程研究所] 期刊論文	2004	Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes	Pan,CC; Lee,CM; Liu,JW; Chen,GT; Chyi,JI
[電機工程研究所] 期刊論文	2003	Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer	Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Overberg,ME; Frazier,R; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
[電機工程研究所] 期刊論文	2003	Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn	Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
[電機工程研究所] 期刊論文	2003	High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer	Lee,CM; Chuo,CC; Chen,IL; Chang,JC; Chyi,JI
[電機工程研究所] 期刊論文	2003	Response to "Comment on 'AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy' " [Appl. Phys. Lett. 83, 3626 (2003)]	Kikuchi,A; Bannai,R; Kishino,K; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2002	AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy	Kikuchi,A; Bannai,R; Kishino,K; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2002	Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy	Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI
[電機工程研究所] 期刊論文	2002	Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing	Chuo,CC; Chang,MN; Pan,FM; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2002	Localized and quantum-well state excitons in AlInGaN laser-diode structure	Chuo,CC; Chen,GT; Lin,MI; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2002	Single-crystal GaN/Gd2O3/GaN heterostructure	Hong,M; Kwo,J; Chu,SNG; Mannaerts,JP; Kortan,AR; Ng,HM; Cho,AY; Anselm,KA; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2001	Comparison of GaN p-i-n and Schottky rectifier performance	Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2001	GaN electronics for high power, high temperature applications	Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG
[電機工程研究所] 期刊論文	2001	Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells	Chuo,CC; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2001	Laser-induced activation of p-type GaN with the second harmonics of a Nd : YAG laser	Cheng,YC; Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chou,CC; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2001	Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells	Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI
[電機工程研究所] 期刊論文	2001	SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors	Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F
[電機工程研究所] 期刊論文	2001	Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes	Lee,CM; Chuo,CC; Dai,JF; Zheng,XF; Chyi,JI
[電機工程研究所] 期刊論文	2001	Schottky rectifiers fabricated on free-standing GaN substrates	Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ
[電機工程研究所] 期刊論文	2000	Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells	Lin,YS; Ma,KJ; Hsu,C; Feng,SW; Cheng,YC; Liao,CC; Yang,CC; Chou,CC; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2000	Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells	Chuo,CC; Lee,CM; Nee,TE; Chyi,JI
[電機工程研究所] 期刊論文	2000	Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers	Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG
[電機工程研究所] 期刊論文	2000	Gd2O3/GaN metal-oxide-semiconductor field-effect transistor	Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2000	High voltage GaN Schottky rectifiers	Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG
[電機工程研究所] 期刊論文	2000	Processing and device performance of GaN power rectifiers	Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ
[電機工程研究所] 期刊論文	2000	Spatial distribution of electrical properties in GaN p-i-n rectifiers	Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2000	Stimulated emission study of InGaN/GaN multiple quantum well structures	Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chuo,CC; Lee,CM; Chyi,JI
[電機工程研究所] 期刊論文	2000	Surface and bulk leakage currents in high breakdown GaN rectifiers	Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2000	Temperature dependence of GaN high breakdown voltage diode rectifiers	Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG
[電機工程研究所] 期刊論文	2000	Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors	Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM
[電機工程研究所] 期刊論文	2000	Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes	Hong,M; Anselm,KA; Kwo,J; Ng,HM; Baillargeon,JN; Kortan,AR; Mannaerts,JP; Cho,AY; Lee,CM; Chyi,JI; Lay,TS
[電機工程研究所] 期刊論文	1999	Growth and device performance of GaN Schottky rectifiers	Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG

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