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"Pearton,SJ"的相關文件

類別	日期	題名	作者
[電機工程研究所] 期刊論文	2006	Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications	Jang,S; Ren,F; Pearton,SJ; Gila,BP; Hlad,M; Abernathy,CR; Yang,H; Pan,CJ; Chyi,JI; Bove,P; Lahreche,H; Thuret,J
[電機工程研究所] 期刊論文	2005	Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection	Chen,WM; Buyanova,IA; Nishibayashi,K; Kayanuma,K; Seo,K; Murayama,A; Oka,Y; Thaler,G; Frazier,R; Abernathy,CR; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
[電機工程研究所] 期刊論文	2005	Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors	Chu,SNG; Ren,F; Pearton,SJ; Kang,BS; Kim,S; Gila,BP; Abernathy,CR; Chyi,JI; Johnson,WJ; Lin,J
[電機工程研究所] 期刊論文	2004	2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier	Irokawa,Y; Luo,B; Kang,BS; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
[電機工程研究所] 期刊論文	2004	AlGaN/GaN HEMT based liquid sensors	Mehandru,R; Luo,B; Kang,BS; Kim,J; Ren,F; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
[電機工程研究所] 期刊論文	2004	DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates	Irokawa,Y; Luo,B; Ren,F; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ; Pearton,SJ
[電機工程研究所] 期刊論文	2004	Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes	Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
[電機工程研究所] 期刊論文	2004	GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates	LaRoche,JR; Luo,B; Ren,F; Baik,KH; Stodilka,D; Gila,B; Abernathy,CR; Pearton,SJ; Usikov,A; Tsvetkov,D; Soukhoveev,V; Gainer,G; Rechnikov,A; Dimitriev,V; Chen,GT; Pan,CC; Chyi,JI
[電機工程研究所] 期刊論文	2004	MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors	Irokawa,Y; Nakano,Y; Ishiko,M; Kachi,T; Kim,J; Ren,F; Gila,BP; Onstine,AH; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
[電機工程研究所] 期刊論文	2004	On the origin of spin loss in GaMnN/InGaN light-emitting diodes	Buyanova,IA; Izadifard,M; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
[電機工程研究所] 期刊論文	2004	Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes	Buyanova,IA; Izadifard,M; Storasta,L; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
[電機工程研究所] 期刊論文	2004	Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers	Buyanova,IA; Bergman,JP; Chen,WM; Thaler,G; Frazier,R; Abernathy,CR; Pearton,SJ; Kim,J; Ren,F; Kyrychenko,FV; Stanton,CJ; Pan,CC; Chen,GT; Chyi,J; Zavada,JM
[電機工程研究所] 期刊論文	2004	Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates	Irokawa,Y; Luo,B; Ren,F; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
[電機工程研究所] 期刊論文	2004	Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates	Kang,BS; Ren,F; Irokawa,Y; Baik,KW; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Ko,HJ; Lee,HY
[電機工程研究所] 期刊論文	2004	Lateral Schottky GaN rectifiers formed by Si+ ion implantation	Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
[電機工程研究所] 期刊論文	2004	Si+ ion implanted MPS bulk GaN diodes	Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS
[電機工程研究所] 期刊論文	2003	Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes	Irokawa,Y; Kim,J; Ren,F; Baik,KH; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
[電機工程研究所] 期刊論文	2003	Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer	Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Overberg,ME; Frazier,R; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
[電機工程研究所] 期刊論文	2003	Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers	Irokawa,Y; Luo,B; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
[電機工程研究所] 期刊論文	2003	Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors	Kang,BS; Kim,S; Kim,J; Ren,F; Baik,K; Pearton,SJ; Gila,BP; Abernathy,CR; Pan,CC; Chen,GT; Chyi,JI; Chandrasekaran,V; Sheplak,M; Nishida,T; Chu,SNG
[電機工程研究所] 期刊論文	2003	Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn	Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
[電機工程研究所] 期刊論文	2002	1.6 A GaN Schottky rectifiers on bulk GaN substrates	Johnson,JW; Lou,B; Ren,F; Palmer,D; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
[電機工程研究所] 期刊論文	2001	Comparison of GaN p-i-n and Schottky rectifier performance	Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2001	GaN electronics for high power, high temperature applications	Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG
[電機工程研究所] 期刊論文	2001	SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors	Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F
[電機工程研究所] 期刊論文	2001	Vertical and lateral GaN rectifiers on free-standing GaN substrates	Zhang,AP; Johnson,JW; Luo,B; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
[電機工程研究所] 期刊論文	2001	Schottky rectifiers fabricated on free-standing GaN substrates	Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ
[電機工程研究所] 期刊論文	2000	Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers	Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG
[電機工程研究所] 期刊論文	2000	Gd2O3/GaN metal-oxide-semiconductor field-effect transistor	Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2000	High voltage GaN Schottky rectifiers	Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG
[電機工程研究所] 期刊論文	2000	Processing and device performance of GaN power rectifiers	Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ
[電機工程研究所] 期刊論文	2000	Properties and effects of hydrogen in GaN	Pearton,SJ; Cho,H; Ren,F; Chyi,JI; Han,J; Wilson,RG
[電機工程研究所] 期刊論文	2000	Spatial distribution of electrical properties in GaN p-i-n rectifiers	Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2000	Surface and bulk leakage currents in high breakdown GaN rectifiers	Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2000	Temperature dependence of GaN high breakdown voltage diode rectifiers	Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG
[電機工程研究所] 期刊論文	2000	Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors	Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM
[電機工程研究所] 期刊論文	1999	Growth and device performance of GaN Schottky rectifiers	Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG

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