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显示项目351-375 / 491. (共20页) << < 10 11 12 13 14 15 16 17 18 19 > >> 每页显示[10|25|50]项目

日期	题名	作者
2003	Fabry-Perot structures for attenuated phase-shifting mask application in ArF and F-2 lithography	Chen,HL; Wu,HS; Lee,CC; Ko,FH; Fan,W; Hsieh,CI
2003	Fabry-Perot type antireflective coatings for binary mask applications in ArF and F-2 excimer laser lithographies	Chen,HL; Lee,CC; Chuang,YF; Liu,MC; Hsieh,CI; Ko,FH
2003	Gallium nitride diffractive microlenses using in ultraviolet micro-optics system	Hou,CH; Li,MH; Chen,CC; Chang,JY; Sheu,JK; Chi,GC; Wu,C; Cheng,WT; Yeh,JH
2003	GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method	Lee,CT; Lee,HY; Chen,HW
2003	Image-plane conical multiplex holography by one-step recording	Cheng,YS; Lai,CM
2003	Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Tu,RC; Tun,CJ; Shen,JK; Kuo,WH; Wang,TC; Tsai,CE; Hsu,JT; Chi,J; Chi,GC
2003	Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers	Tu,RC; Chuo,CC; Pan,SM; Fan,YM; Tsai,CE; Wang,TC; Tun,CJ; Chi,GC; Lee,BC; Lee,CP
2003	Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers	Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG
2003	Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature	Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC
2003	Increasing the conductivity of photorefractive BaTiO3 single crystals by doping Ru	Lin,CH; Huang,CY; Chang,JY
2003	Investigation of accumulated carrier mechanism on sulfurated GaN layers	Lin,YJ; Lee,CS; Lee,CT
2003	Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN	Lin,YJ; Li,ZD; Hsu,CW; Chien,FT; Lee,CT; Shao,ST; Chang,HC
2003	Investigation of degradation mechanism of Schottky diodes	Lee,HY; Lee,CT
2003	Light modulation based on active-vibration-controlled beam fanning in BaTiO3	Ouyang,Y; Sun,CC; Hsu,CY; Yau,HF
2003	Low alkaline contamination bottom antireflective coatings for both 193-and 157-nm lithography applications	Chen,HL; Chuang,YF; Lee,CC; Hsieh,CI; Ko,FH; Wang,LA
2003	Low-temperature Raman study of zinc-doped lithium niobate crystal powders	Hu,ML; Chia,CT; Chang,JY; Tse,WS; Yu,JT
2003	Measuring the thickness of opaque plane-parallel parts using an external cavity diode laser and a double-ended interferometer	Lu,SH; Chiueh,CI; Lee,CC
2003	Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air	Lee,CT; Lin,YJ; Lee,TH
2003	Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN	Lee,CT; Chen,HW; Lee,HY
2003	Metal-semiconductor-metal photodetectors with InAlGaP capping and buffer layers	Lee,CT; Lee,HY
2003	Micropolarizer fabricated from CaCO3 by anisotropic wet etching	Chang,YC; Tien,HT; Sung,CD; Lee,CC; Wang,CM; Chang,JY
2003	Multilayer storage in a shift-multiplexed holographic disk	Su,WC; Chen,YW; Sun,CC; Ouyang,Y
2003	Multiplexed edge-lit holograms	Su,WC; Sun,CC; Kukhtarev,N
2003	Optical identification using a random phase mask	Su,WC; Chen,YW; Ouyang,Y; Sun,CC; Wang,B
2003	Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode	Yu,QX; Xu,B; Wu,QH; Liao,Y; Wang,GZ; Fang,RC; Lee,HY; Lee,CT

显示项目351-375 / 491. (共20页) << < 10 11 12 13 14 15 16 17 18 19 > >> 每页显示[10|25|50]项目