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"Lee,ML"的相關文件

類別	日期	題名	作者
[光電科學研究中心] 期刊論文	2003	Deep level defect in Si-implanted GaN n(+)-p junction	Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ
[光電科學研究中心] 期刊論文	2002	Characterization of Si implants in p-type GaN	Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
[光電科學與工程學系] 期刊論文	2010	InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer	Tu,SH; Lan,CJ; Wang,SH; Lee,ML; Chang,KH; Lin,RM; Chang,JY; Sheu,JK
[光電科學與工程學系] 期刊論文	2004	Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer	Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC
[物理研究所] 期刊論文	2006	Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride	Tun,CJ; Sheu,JK; Lee,ML; Hu,CC; Hsieh,CK; Chi,GC
[物理研究所] 期刊論文	2005	Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors	Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ
[物理研究所] 期刊論文	2005	Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase	Sheu,JK; Chen,SS; Lee,ML; Lai,WC; Chi,GC
[物理研究所] 期刊論文	2005	Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature	Sheu,JK; Lee,ML; Lai,WC; Tseng,HC; Chi,GC
[物理研究所] 期刊論文	2004	Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors	Kao,CJ; Sheu,JK; Lai,WC; Lee,ML; Chen,MC; Chi,GC
[物理研究所] 期刊論文	2003	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM
[物理研究所] 期刊論文	2003	GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts	Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA
[物理研究所] 期刊論文	2003	Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer	Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM
[物理研究所] 期刊論文	2003	Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure	Yeh,LS; Lee,ML; Sheu,JK; Chen,MG; Kao,CJ; Chi,GC; Chang,SJ; Su,YK
[物理研究所] 期刊論文	2002	GaN p-n junction diode formed by Si ion implantation into p-GaN	Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC
[物理研究所] 期刊論文	2002	Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN	Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT
[物理學系] 期刊論文	2011	Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers	Sheu,JK; Tu,SJ; Lee,ML; Yeh,YH; Yang,CC; Huang,FW; Lai,WC; Chen,CW; Chi,GC
[電機工程研究所] 期刊論文	2003	Modeling of hierarchical fuzzy systems	Lee,ML; Chung,HY; Yu,FM
[電機工程學系] 期刊論文	2011	Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique	Shi,JW; Huang,HW; Kuo,FM; Lai,WC; Lee,ML; Sheu,JK
[電機工程學系] 期刊論文	2011	The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer	Shi,JW; Kuo,FM; Huang,HW; Sheu,JK; Yang,CC; Lai,WC; Lee,ML
[電機工程學系] 期刊論文	2010	Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer	Shi,JW; Huang,HW; Kuo,FM; Sheu,JK; Lai,WC; Lee,ML

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